收藏本站
NXP Semiconductors
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
7. Application information
The PESD5V0U4BF and the PESD5V0U4BW are designed for the protection of up to four
bidirectional data or signal lines from the damage caused by ESD and surge pulses. The
devices may be used on lines where the signal polarities are both, positive and negative
with respect to ground.
data- or transmission lines
DUT
1
2
3
6
5
4
006aab335
Fig 5.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test quali?cation for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0U4BF_PESD5V0U4BW_1
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2008
7 of 12
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
PESD5V0U5BV,115 DIODE ARRAY ESD BI-DIR SS MINI6
PESD5V0V1BL,315 DIODE BI ESD PROTECT SOD882
PESD5V0V1BLD,315 DIODE ESD PROTECTION SOD-882
PESD5V0V1BSF,315 DIODE BIDIR ESD PROT SOD962
PESD5V0X1BL,315 DIODE ESD PROT BI-DIR 5V SOD-882
PESD5V0X1BQ,115 DIODE ESD PROT BI-DIR 5V SOT-663
PESD5V0X1UAB,115 DIODE ESD PROT UNIDIR 5V SOD523
PESD5V0X1UALD,315 DIODE ESD PROT UNIDIR 5V SOD882
相关代理商/技术参数
PESD5V0U4BW 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance bidirectional quadruple ESD protection arrays
PESD5V0U4BW,115 功能描述:TVS二极管阵列 Diode TVS Quad Bi-Dir 5V 5-Pin RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD5V0U5BF 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance bidirectional fivefold ESD protection arrays
PESD5V0U5BF,115 功能描述:TVS二极管阵列 Diode TVS Quint Bi-Dir 5V 6-Pin RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD5V0U5BV 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance bidirectional fivefold ESD protection arrays
PESD5V0U5BV,115 功能描述:TVS二极管阵列 Diode TVS Quint Bi-Dir 5V 6-Pin RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD5V0V1BA 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Clamping Voltage
PESD5V0V1BA,115 功能描述:ESD 抑制器 DIODE BI ESD PROTECT RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C